Foundation of rf CMOS and SiGe BiCMOS technologies

نویسندگان

  • James S. Dunn
  • David C. Ahlgren
  • Douglas D. Coolbaugh
  • Natalie B. Feilchenfeld
  • Gregory Freeman
  • David R. Greenberg
  • Robert A. Groves
  • Fernando J. Guarín
  • Youssef Hammad
  • Alvin J. Joseph
  • Louis D. Lanzerotti
  • Stephen A. St. Onge
  • Bradley A. Orner
  • Jae-Sung Rieh
  • Kenneth J. Stein
  • Steven H. Voldman
  • Ping-Chuan Wang
  • Michael J. Zierak
  • Seshadri Subbanna
  • David L. Harame
  • Dean A. Herman
  • Bernard S. Meyerson
چکیده

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

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عنوان ژورنال:
  • IBM Journal of Research and Development

دوره 47  شماره 

صفحات  -

تاریخ انتشار 2003