Foundation of rf CMOS and SiGe BiCMOS technologies
نویسندگان
چکیده
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.
منابع مشابه
Design and Reliability of High Dynamic Range Rf Building Blocks in Soi Cmos and Sige Bicmos Technologies
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ورودعنوان ژورنال:
- IBM Journal of Research and Development
دوره 47 شماره
صفحات -
تاریخ انتشار 2003